Electrical Characteristics (T A = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV DSS
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
V GS = 0 V, I D = -250 μA
V DS = -24 V, V GS = 0 V
V DS = -15 V, V GS = 0 V
V GS = 20 V, V DS = 0 V
V GS = -20 V, V DS = 0 V
T J = 70°C
-30
-1
-5
100
-100
V
μA
μA
nA
nA
ON CHARACTERISTICS (Note 2)
V GS(th)
Gate Threshold Voltage
V DS = V GS , I D = -250 μA
-1
-2.7
V
R DS(ON)
Static Drain-Source On-Resistance
V GS = -10 V, I D = -5.9 A
0.038
0.05
?
V GS = -6 V, I D = -5.2 A
V GS = -4.5 V, I D = -4.6 A
0.046
0.064
0.07
0.09
I D(on)
On-State Drain Current
V GS = -10 V, V DS = -5 V
-15
A
V GS = -4.5, V DS = -5V
-5
g FS
Forward Transconductance
V DS = 15 V, I D = 5.9 A
10
S
DYNAMIC CHARACTERISTICS
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 15 V, V GS = 0 V,
f = 1.0 MHz
950
610
220
pF
pF
pF
SWITCHING CHARACTERISTICS (Note 2)
t D(on)
t r
t D(off)
t f
Q g
Q gs
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
V DD = -15 V, I D = -1 A,
V GEN = -10 V, R GEN = 6 ?
V DS = -15 V,
I D = -5.9 A, V GS = -10 V
10
18
80
45
29
3
30
60
120
100
40
ns
ns
ns
ns
nC
Q gd
Gate-Drain Charge
11
NDT454P Rev. D2
相关PDF资料
NDT456P MOSFET P-CH 30V 7.5A SOT-223-4
NE34018-EVGA19 EVAL BOARD NE34018 1.9GHZ
NE5520279A-EVPW09 EVAL BOARD NE5520279A 900MHZ
NE6510179A-EVPW35 EVAL BOARD NE6510179A 3.5GHZ
NE651R479A-EVPW35 EVAL BOARD NE651R479A 3.5GHZ
NHD-COG14-36 ADAPTER SMT TO 2.54MM THRU-HOLE
NHD-TS-12864ARNB# TOUCH PANEL 82X50.2MM 4-WIRE
NHD-TS-12864CRNA# TOUCH PANEL 71.3X55MM 4-WIRE
相关代理商/技术参数
NDT454P(J23Z) 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 5.9A I(D) | SOT-223
NDT454P 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR
NDT455N 功能描述:MOSFET SOT-223 N-CH ENHANCE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDT455N(J23Z) 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 11.5A I(D) | SOT-223
NDT456 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel Enhancement Mode Field Effect Transistor
NDT456P 功能描述:MOSFET SOT-223 P-CH ENHANCE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDT456P(J23Z) 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 7.5A I(D) | SOT-223
NDT456P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P LOGIC SOT-223